Infineon FS45MR12W1M1B11BOMA1 CoolSiC MOSFET 저전력 이지

Fall Time: 16.4 ns

Rise Time: 6.3 ns

Technology: Si

Unit Weight: 24 g

Configuration: Hex

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Vf - Forward Voltage: 4.6 V

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 20 mW

Vgs - Gate-Source Voltage: - 10 V, + 20 V

Typical Turn-On Delay Time: 8.2 ns

Typical Turn-Off Delay Time: 35.2 ns

Id - Continuous Drain Current: 25 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 45 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.45 V