Infineon AIKW50N65DF5XKSA1 IGBT 트랜지스터 디스크리트

Technology: Si

Unit Weight: 6.048 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 270 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.66 V

Continuous Collector Current at 25 C: 80 A