Infineon FF100R12RT4 IGBT 모듈 IGBT 및 다이오드 포함 IGBT 모듈

Technology: Si

Unit Weight: 160 g

Configuration: Dual

Pd - Power Dissipation: 555 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 100 A