Infineon FP06R12W1T4_B3 IGBT 실리콘 모듈 1200 V, 6 A PIM IGBT 모듈

Technology: Si

Unit Weight: 24 g

REACH - SVHC: Details

Configuration: 3-Phase Inverter

Pd - Power Dissipation: 94 W

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 12 A