Infineon FS450R17OE4 IGBT 모듈 IGBT 모듈 450A 1700V

Technology: Si

Unit Weight: 1 kg

REACH - SVHC: Details

Configuration: 6-Pack

Pd - Power Dissipation: 2.4 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 630 A