Infineon FZ1200R33HE3 IGBT 모듈 IGBT 모듈 1200A 3300V

Technology: Si

Unit Weight: 1.2 kg

Configuration: Single

Pd - Power Dissipation: 1.8 MW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 3.3 kV

Collector-Emitter Saturation Voltage: 2.7 V

Continuous Collector Current at 25 C: 1.2 kA