Infineon IGLT65R110D2ATMA1 GaN 트랜지스터 HV GAN 디스크리트

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 3.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 10 V

Id - Continuous Drain Current: 15 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 140 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V