Infineon IPI60R199CPXKSA2 MOSFETs 하이 파워_레거시

Width: 4.5 mm

Height: 9.45 mm

Length: 10.2 mm

Technology: Si

Unit Weight: 2.387 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 11 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 139 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 16 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 199 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3 V