Infineon IPS04N03LB G MOSFET

Vgs(th): 2 V

Vgs (Max): 20V

Gate Charge (Qg): 40nC

Power consumption: 115W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 50A

Input Capacitance (Ciss): 5200pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 4.3mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V