Infineon IR2103SPBF 하이 사이드 및 로우 사이드

Type: High and Low Side

Gate type: IGBT|NChannelMOSFET

Input type: Reversal|Non-inverted

Channel Fit: Independence

Constitution: Half Bridge

Voltage (UL): 0.8|3V

Mounting Type: Surface Mount

Rise/Fall Time: 100|50ns

Supply voltage: 10 to 20V

Bootstrap Voltage: 600V

Number of drivers: 2

Operating temperature: --40 to 150C

Maximum output current: 210mA|360mA

Number of poles of the contact point: 8