Infineon IRF1902PBF MOSFET

Vgs(th): 0.7V

Vgs (Max): 12V

Gate Charge (Qg): 7.5nC

Power consumption: 2.5W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 4.2A

Input Capacitance (Ciss): 310pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 85mOhm

Drive Voltage (Max Rds On, Min Rds On): 2.7|4.5V

Datasheet