Infineon IRF8327STRPBF MOSFET

Vgs(th): 2.4 V

Vgs (Max): 20V

Gate Charge (Qg): 14nC

Power consumption: 2.2|42W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 14A/60A

Input Capacitance (Ciss): 1430pF

Operating temperature range: -40 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 7.3mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet