Infineon IRF9520NS 파워 MOSFET

Type: Power MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 27nC

Power consumption: 3.8|48W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 100V

Continuous drain current: 6.8A

Input Capacitance (Ciss): 350pF

Operating temperature range: -55 to 175C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 480mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet