Infineon IRFR2607ZPBF MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 51nC

Power consumption: 110W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 75V

Continuous drain current: 42A

Input Capacitance (Ciss): 1440pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 22mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V