InterFET 2N4340 JFET JFET N-채널 -50V 저 Ciss

Technology: Si

Unit Weight: 480.260 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 3 V

Drain-Source Current at Vgs=0: 3.6 mA

Id - Continuous Drain Current: 100 pA

Forward Transconductance - Min: 1300 uS

Rds On - Drain-Source Resistance: 1.5 kOhms

Vgs - Gate-Source Breakdown Voltage: - 50 V

Vds - Drain-Source Breakdown Voltage: 15 V