InterFET 2N4868 JFET JFET N-채널 -40V 저 Ciss
Model2N4868
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: - 3 V
Drain-Source Current at Vgs=0: 3 mA
Id - Continuous Drain Current: 1 uA
Forward Transconductance - Min: 1000 uS
Vgs - Gate-Source Breakdown Voltage: - 40 V
Vds - Drain-Source Breakdown Voltage: 20 V
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