InterFET IFN5197 JFET JFET N-채널(듀얼) -50V 저 Ciss

Technology: Si

Configuration: Dual

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 mW

Gate-Source Cutoff Voltage: - 4 V

Drain-Source Current at Vgs=0: 7 mA

Id - Continuous Drain Current: - 200 uA

Forward Transconductance - Min: 1 mS

Vgs - Gate-Source Breakdown Voltage: - 50 V

Vds - Drain-Source Breakdown Voltage: 20 V