IXYS IXBH42N250 IGBT 트랜지스터 TO247 2500V 42A 하이 게인

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 500 W

Maximum Gate Emitter Voltage: - 25 V, 25 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 2.5 kV

Collector-Emitter Saturation Voltage: 3 V

Continuous Collector Current at 25 C: 104 A