IXYS IXBT2N250-TR MOSFETs IXBT2N250 TR

Fall Time: 178 ns

Rise Time: 280 ns

Technology: Si

Unit Weight: 6.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 10.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 32 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 74 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.85 S

Vds - Drain-Source Breakdown Voltage: 2.5 kV

Vgs th - Gate-Source Threshold Voltage: 3 V