IXYS IXFK80N65X2 MOSFETs 650V/80A 울트라 접합 X2-클래스

Fall Time: 11 ns

Rise Time: 24 ns

Technology: Si

Unit Weight: 10 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 140 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 890 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 32 ns

Typical Turn-Off Delay Time: 70 ns

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 33 S

Rds On - Drain-Source Resistance: 38 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V