IXYS IXFN82N60Q3 MOSFET 모듈 Q3Class HiPerFET 전력 MOSFET 600V/66A

Rise Time: 300 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 960 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 66 A

Rds On - Drain-Source Resistance: 75 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V