IXYS IXFP130N10T MOSFETs 130암페어 100V

Technology: Si

Unit Weight: 2 g

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 130 A

Rds On - Drain-Source Resistance: 9.1 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V