IXYS IXFT150N20T MOSFETs 트렌치 HiperFETs 파워

Technology: Si

Unit Weight: 6.500 g

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 150 A

Rds On - Drain-Source Resistance: 15 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V