IXYS IXTA10N60P MOSFETs 10.0 암페어 600 V 0.74 옴 Rds

Width: 9.65 mm

Height: 4.83 mm

Length: 10.41 mm

Fall Time: 21 ns

Rise Time: 27 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 200 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 23 ns

Typical Turn-Off Delay Time: 65 ns

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 11 S

Rds On - Drain-Source Resistance: 740 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V