IXYS IXTH12N150 고전압 파워 MOSFET >1200V 고전압 파워 MOSFET

Width: 5.3 mm

Height: 21.46 mm

Length: 16.26 mm

Fall Time: 14 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 106 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 890 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 53 ns

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 S

Rds On - Drain-Source Resistance: 2 Ohms

Vds - Drain-Source Breakdown Voltage: 1.5 kV

Vgs th - Gate-Source Threshold Voltage: 4.5 V