IXYS IXTH2N170D2 MOSFETs N-채널 MOSFET

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 110 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 568 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 6.5 Ohms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 4.5 V