IXYS IXTK120P20T TrenchP 파워 MOSFET

Width: 5.31 mm

Height: 26.59 mm

Length: 20.29 mm

Fall Time: 50 ns

Rise Time: 85 ns

Technology: Si

Unit Weight: 10 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 740 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.04 kW

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Typical Turn-On Delay Time: 90 ns

Typical Turn-Off Delay Time: 200 ns

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 85 S

Rds On - Drain-Source Resistance: 30 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V