IXYS IXTK20N150 MOSFETs 1200V 고전압 파워 MOSFET

Technology: Si

Unit Weight: 10 g

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 20 A

Rds On - Drain-Source Resistance: 1 Ohms

Vds - Drain-Source Breakdown Voltage: 1.5 kV