IXYS IXTP36N20T MOSFETs 36암페어 200V 60 Rds

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 36 A

Rds On - Drain-Source Resistance: 60 Ohms

Vds - Drain-Source Breakdown Voltage: 200 V