IXYS IXTQ200N10T MOSFETs 200암페어 100V 5.4 Rds

Width: 4.9 mm

Height: 20.3 mm

Length: 15.8 mm

Fall Time: 34 ns

Rise Time: 31 ns

Technology: Si

Unit Weight: 5.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 152 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 550 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 35 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 200 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5.5 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V