IXYS IXTT30N60L2 확장된 FBSOA를 갖춘 Linear L2 전력 MOSFET 30암페어 600V

Fall Time: 43 ns

Rise Time: 65 ns

Technology: Si

Unit Weight: 6.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 335 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 540 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 43 ns

Typical Turn-Off Delay Time: 123 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10 S, 18 S

Rds On - Drain-Source Resistance: 240 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V