IXYS IXXN100N60B3H1 IGBT 트랜지스터 XPT 600V IGBT GenX3 다이오드 포함

Technology: Si

Unit Weight: 27 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 500 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 170 A