IXYS MMIX1F44N100Q3 MOSFETs HiperFET Pwr MOSFET Q3-클래스

Fall Time: 28 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 8 g

Mounting Style: SMD/SMT

Qg - Gate Charge: 264 nC

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 43 S

Rds On - Drain-Source Resistance: 245 mOhms

Vds - Drain-Source Breakdown Voltage: 1 kV