Polarity: N
Gate Charge (Qg): 380nC
Power consumption: 550W
Drain to Source voltage: 800V
Continuous drain current: 44A
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 165mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
