MACOM PXAC200902FC-V1-R0 RF 파워 MOSFET RF LDMOS FET

Gain: 17.2 dB

Technology: Si

Output Power: 90 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.805 GHz to 2.17 GHz

Transistor Polarity: Dual N-Channel

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 225 C

Rds On - Drain-Source Resistance: 220 mOhms

Vds - Drain-Source Breakdown Voltage: 65 V