빠른 지원
인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결
Vgs(th): 0.9 V
Vgs (Max): 8V
Gate Charge (Qg): 7.8nC
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 12V
Continuous drain current: 6A
Input Capacitance (Ciss): 740pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 45mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V