Micro Commercial Components (MCC) SI2012KL3-TP MOSFETs P-채널 MOSFET, DFN1006-3

Technology: Si

Mounting Style: SMD/SMT

Qg - Gate Charge: 1.7 nC

Transistor Polarity: P-Channel

Pd - Power Dissipation: 740 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Id - Continuous Drain Current: 980 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 500 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V