Microchip Technology 2N2484UB/TR BJTs - 바이폴라 트랜지스터 60V 50mA 360mW 3-핀 CER NPN 소신호 BJT TR

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 360 mW

DC Current Gain hFE Max: 800 at 500 uA, 5 V

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 45 at 1 uA, 5 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 300 mV