Microchip Technology 2N3500U4/TR BJTs - 바이폴라 트랜지스터 150V 300mA 1W NPN 소신호 BJT SMT TR

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 120 at 150 mA, 10 V

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 150 V

Maximum DC Collector Current: 300 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 15 at 300 mA, 10 V

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 400 mV