Microchip Technology 2N3791 BJTs - 바이폴라 트랜지스터 60V 10A 5W PNP 파워 BJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 150 W

DC Current Gain hFE Max: 150 at 1 A, 2 VDC

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50 at 1 A, 2 VDC

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1 V