Microchip Technology 2N4391 JFET JFET

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.8 W

Gate-Source Cutoff Voltage: 10 V

Maximum Drain Gate Voltage: 40 V

Drain-Source Current at Vgs=0: 150 mA

Id - Continuous Drain Current: 12 mA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 30 Ohms

Vgs - Gate-Source Breakdown Voltage: 40 V

Vds - Drain-Source Breakdown Voltage: 400 mV