Microchip Technology 2N6987U/TR BJTs - 바이폴라 트랜지스터 60V 600mA 1.5W PNP 쿼드 - 소신호 BJT SQ SMT TR

Technology: Si

Configuration: Quad

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 400 mW

DC Current Gain hFE Max: 450 at 1 mA, 10 V

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50 at 500 mA, 10 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.6 V