Microchip Technology APT100GLQ65JU3 IGBT 모듈 PM-IGBT-TFS-SOT227

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 430 W

Gate-Emitter Leakage Current: 150 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 165 A