Microchip Technology APT40GLQ120JCU2 IGBT 모듈 PM-IGBT-TFS-SBD-SOT227

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 312 W

Gate-Emitter Leakage Current: 120 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.05 V

Continuous Collector Current at 25 C: 80 A