Microchip Technology APT50GF120B2RG IGBT 트랜지스터 IGBT NPT 저주파 단일 1200 V 50 A TO-247 MAX

Technology: SiC

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 781 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 135 A