Microchip Technology APT60N60BCSG MOSFETs MOSFET COOLMOS 600 V 60 A TO-247

Width: 16.26 mm

Height: 5.31 mm

Length: 21.46 mm

Fall Time: 10 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 150 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 431 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 100 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 45 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3 V