Microchip Technology APTC60HM35T3G 하프 브리지 모듈 PM-MOSFET-COOLMOS-SP3F

Width: 40.8 mm

Height: 11.5 mm

Length: 73.4 mm

Fall Time: 84 ns

Rise Time: 30 ns

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 416 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 21 ns

Typical Turn-Off Delay Time: 283 ns

Id - Continuous Drain Current: 72 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V