Microchip Technology APTGLQ50TL65T3G IGBT 모듈 PM-IGBT-TFS-SP3F

Technology: Si

Unit Weight: 110 g

Configuration: Quad

Mounting Style: Screw Mount

Pd - Power Dissipation: 175 W

Gate-Emitter Leakage Current: 150 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 70 A