Microchip Technology APTGT100DA60T1G IGBT 모듈 PM-IGBT-TFS-SP1

Technology: Si

Unit Weight: 80 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 340 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 150 A