Microchip Technology APTGT600U170D4G IGBT 모듈 PM-IGBT-TFS-D4

Technology: Si

Unit Weight: 350 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 2.9 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 1.1 kA